工艺参数对SiC单晶片切割表面质量的影响
王肖烨.2
李言李淑娟
袁启龙
（1西安理工大学机械与精密仪器工程学院，西安710048）
(2宝鸡文理学院机电工程系，宝鸡721007）
杨明顺
文摘SiC单晶片表面质量对其后续半导体器件的制造有很大影响，但其材料的高硬度和高脆性，使切片过程变得非常图难。本文在往复式电镀全刚石线切割装置上采用单因素和正交法进行了SiC单晶切割实验，研究了工件转速、线锯速率、工件进给速率、线锯磨损对晶片表面粗糙度的响规律以及三维形貌特点。结果表明：附加工件旋转运动，晶片表面质量提高，划痕减少、深度变浅；线速增大、工件旋转速率增大或工件进给速率减小，表面粗糙度值减小；线锯磨损晶片表面租度值增大。相对线速和线锯磨损，工件转速和工件进给速率对晶片表面质量及粗度的影响更大。应在综合考感效率和线锯损耗的基础上合理确定切割参数，尤其是工件进给速率。
关键词金刷石线锯，工件旋转，SiC单晶片，工艺参数，表面质量
InfluenceofProcessParametersonSiCWafersSurfaceQuality
WangXiaoyel.2
Li Yan'
Li Shujuan'
YangMingshun'
YuanQilong
(1 Faculty of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an 710048)(2Baoji University of Arts and Science Electronic and Mechanical Engineering Department, Baoji 721007)
Abstract Surface quality of SiC wafers has a great influence on its subsequent semiconductor device manufac turing,however,SiC cut processing is very difficult because of its high hardness and high brittleness. Based on recip-rocating electroplated diamond wire saw eutting single-crystal SiC experiments and the combinations of sawing parame-ters are designed by using the one-faclor and the orthogonal method., The influences of work-piece rotating rate, wire saw feeding rate, and work-piece feeding rate and wire saw wear on wafers surface roughness and 3-d topography char-acteristic was studied. The results indicate that wafers surface quality improvement, and scratches reduce and be-comes shallow depth when additional work-piece rotation movement; the surface roughness decreases with the work-piece rotating rate, wire saw rate, decrease of work-piece feeding rate, and the surface roughness increases with the wire saw wear; the influence is much more of work-piece rotating rate and work-piece feeding rale on the wafers sur face quality and roughness compare with wire saw rate and wire saw wear; It should reasonably determine the cutting parameters, especially work-piece feed rate based on the comprehensively considered cutting efficiency and loss of wiresaw.
Key wordsDiamond wire saw,Work-piece rotates,SiC wafers,Process parameters,Surface quality
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SiC单晶片在微电子、光电子领域发挥差非常重要的作用，该领城对SiC单晶片的应用要求为晶片表面超光滑、无缺陷、无损伤。SiC单晶切割加工极其困难，切割质量影响后续及最终加工质量。因此，高
收稿日期：2011-08-29
精度、高效率、低成本的SiC单晶片切割加工技术成为亟待解决的关键问题“）。固结磨料线锯切片技术由于具有切缝窄、材料去除率高.切片质量好和切割环境清洁等(21优点而成为切割SiC等硬脆材料的理想方法，并受到越来越广泛地关注[3-9]。研究结果表
基金项目：国家自然科学基金资助项目(51175420）：陕西省科技攻关基金资助项目（2010k09-01）：宝鸡文理学院院级重点项目（ZK11164）；陕西省教育厅重点资助项目（12JK0668）
作者简介：王肖烨，1975年出生，博士研究生，主要从事先进制造及精密加工技术的研究。E-mail;xiaoyewang221@163.com
宇航材料工艺http：//www.yhclgy.com2012年第3期
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