机械工程材料
MATERIALS FOR MECHANICAL ENGINEERIWG DOI:10,11973/jxgccl201507005
2015年7月第39卷第7期Vol,39Na,7Jul.2015
铜箔形貌对石墨烯生长质量影响的
表面氧化法评判梁勇明，周建新，张芸秋
（南京航空航天大学材料科学与技术学院，纳智能材料器件教育部重点实验室，
机械结构力学及控制国家重点实验室，纳米科学研究所，南京210016）
摘要：采用简化的电化学抛光工艺得到了具有平整表面的铜箔.然后分别以电化学抛光前后的铜箔为基底，通过化学气相沉积法制备了石墨烯，利用原子力显微镜、光学显微镜、扫描电镜、电子能谱仪、拉受光谱和I-V特性电学测试仪等研究了铜箱表面形貌与石墨烯质量的关联，并通过表面氧化法来判断石墨烯是否在基底上生长完全。结果表明：在抛光铜箔上生长的石墨烯缺陷较少、形貌完整，并且导电性能明显提高；表面氧化法可以快速准确判断石墨烯的生长质量。
关键词：化学气相沉积法；石墨烯；铜箔；表面氧化法
中图分类号：（)613.7
文献标志码：A
文章编号：1000-3738(2015)07-0025-06
Surface Oxidation Method Judging of the Effect of CuFoilMorphologyonGrapheneGrowthQuality
LIANG Yong-ming, ZHOU Jian-xin, ZHANG Yun-qiu
(College of Material Science and Technology, Key Laboratory of Intelligent Nano Materials and Devices of
Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures. Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics. Nanjing 210016, China)
Abstract: Copper foils with smooth surface were prepared by simplified electrochemical polishing process. and then the copper foils before and after electrochemical polishing were taken as the substrate to prepare graphenes by chemical vapor deposition (CVD) method., The relationship between copper foil surface morphology and graphene quality was studied via atomic force microscopy (AFM), optical microscopy(OM), scanning electron microscopy(SEM), energy dispersive spectrometer (EDS), Raman spectrum and I-V measurements, Surface oxidation method was used to judge the growth quality of the graphene. The results show that the graphene grown on the copper foil after polishing had a small number of defects, integrated morphology and obviously improved conductivity. Surfacc oxidation method could rapidly and accurately judge the growth quality of the graphene.
Key words: chemical vapor deposition method; graphene; copper foil; surface oxidation method
0引言
石墨烯作为自然界已知最薄的材料，厚度仅为收稿日期：2014-01-24：修订日期：2014-12-26
基金项目：国家自然科学基金资助项目（51002076.51375240)；机械
结构力学及控制国家重点实验室（南京航空航天大学）自主研究课题项目（0413Y02)；中央高校基本科研业务费专项资金资助项目（NJ20140003）
作者简介：桑勇明（1986一）.男，广西桂林人，硕土研究生。
导师：周建新副教授万方数据
0.335nml-2，因其秋拉克载流子高迁移率、高热导率高强度、高透明性和柔性等独特的性能引起了物理、化学、材料、电子等多领域研究人员的密切关注(3-)。
石墨烯的制备方法主要包括机械剥离法、外延生长法（如在绝缘SiC表面上）、化学气相沉积法司、电弧放电法[6)、化学液相剥离法（包括石墨插层法和热膨胀剥离法[7-8等）、石墨氧化还原法[9以及电化学方法"等。其中，化学气相沉积法应用较广泛]，是一种可控的石墨烯生长方法。以铜箔基底为催化剂，以甲烷为碳源、氢气为载气，可以获得大
25