第22卷第2期 Vol.22 No.2
中国有色金属学报
The Chinese Journal of Nonferrous Metals
文章编号：1004-0609(2012)02-0490-06
激光照射原位生成SiC晶须的晶须形态
赵剑峰，衰鑫
(南京航空航天大学机电学院，南京210016)
2012年2月 Feb.2012
摘要：利用冷等静压法将掺有粘结剂的SiC纳米颗粒压制成块体并经大功率CO2激光器照射，在激光照射区域获得SiC晶须，利用扫描电镜对晶须进行观察，分析照射层不同区域和不同气氛环境下晶须形态的变化。结果表明：不同气氛环境下品须形态有显著区别，分别表现为放射状团簇特征、螺旋状团簇特征和密排短棒状团簇特征；同一照射层内，不同区域晶须形态也不一致，沿光束入射方向，可见以较大晶粒为核心的团簇状小长径比晶须和
数量丰富、形态良好的大长径比晶须；不同的气组分和光强梯度分布是造成晶须形态不同的主要原因。关键词：激光照射；原位生长：；SiC晶须；形态
中图分类号：0784
文献标志码：A
Morphologyof SiCwhiskerin-situgrowthbylaserirradiation
ZHAO Jian-feng,YUAN Xin
(College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics,
Nanjing210016,China)
Abstract: The in-situ growth of SiC whiskers by laser irradiation directly on nano-particles mixed with binder and compressed by the cold isostatic pressing method was performed. The morphologies of SiC whiskers were observed by means of the scanning electron microscopy. The results show that the whiskers exhibit, respectively, as the feature of actinomorphic cluster, helical cluster and short-rod cluster, which grow in the specimen with the binder. In the different irradiation regions within discretionary specimen, the whiskers morphologies are not alike. Along the direction of incidence of laser beam, the whiskers with small long-diameter ratio grow around the large crystal grain in the middle region of irradiation layer, the shape of them is the short-rod. At the bottom, the abundant and fine whiskers with the feature of large long-diameter ratio are observed, The gasification products of different binders and the grads distributing
of laser intensity are the master factors to cause different whisker morphologies. Key words: laser irradiation; in-situ growth; SiC whiskers; morphology
碳化硅晶须具有高硬度、高韧性、高耐磨性、耐高温性、抗高温蠕变以及低热膨胀系数等特殊性能及其在光电子器件、高强度复合材料构件以及表面增强等领域的应用前景，使得SiC晶须制备技术的研究方兴未艾]。在原有较为成熟的制备方法，如稻壳合成法[2]、化学气相沉积法[3]、溶胶-凝胶法[4以及碳热还原法[5]等的基础上，针对前驱体原料体系和加热方法
基金项目：国家自然科学基金资助项目(50305010) 收稿日期：2011-02-07；修订日期：2011-10-07
的研究正不断深入，如翟蕊等[]在FeSi熔体中获得SiC 晶须，曹小明等[7以酚醛树脂和氯化镍为催化剂在泡沫碳化硅表面原位获得SiC晶须，白朔等[*)以NaF为助熔剂于1400℃在SiO2和活性炭混合物中获得SiC 仿生晶须，吴彦军等[9基于碳纤维合成了SiC晶须， DAI等[I0]用微波加热的方法也成功合成了SiC晶须。唐陈霞等[]用激光照射SiC颗粒材料原位生成SiC晶
通信作者：赵剑峰，教授，博士：电话：025-84892732；E-mail:zhaojf@nuaa.edu.cn