第18卷第2期 2018年4月
流动与传递
过程工程学报
The Chinese Jourmal of Process Engineering
Vol.18 No.2 Apr.2018
DOI: 10.12034/j.issn.1009-606X.217295
碳化硅晶体生长炉辐射换热特性的数值模拟杨春振12，刘光霞"，陈成敏"，许敏"，王立秋13
[1.齐鲁工业大学(山东省科学院)能源研究所，山东济南250014：2.山东神华山大能源环境有限公司，山东济南250014
3.香港大学机板工程系，香港999077)
要：采用C语言建立了碳化硅(SiC)晶体生长炉三维温度场数值模拟平台，基于柱坐标系构建生长炉物理模型，采用有限体摘
积法离散数学模型，利用S2S(SurfacetoSurface)辐射模型考察了生长室内的辐射换热特性，提出判断辐射面可视性的最短距离法.模拟了电流强度1250A、电流频率16kHz条件下的生长炉温度场，定量揭示了生长室内的辐射换热强度：采用标准偏差法研究了线圈结构对晶体内部温度及温度梯度均匀性的影响。结果表明，螺旋电磁加热线圈容易导致生长炉内部温度场呈非轴对称分布；辐射热流较导热热流大102~103倍，辐射换热促使生长室内温度分布均匀：螺旋线圈的布置方式使晶体截面温度呈非
轴对称分布，造成温度梯度的均匀性变差，晶体生长过程中容易产生热应力，影响晶体质量、关键词：碳化硅晶体：温度场：三维数值模拟：有限体积法
中图分类号：Q814.2
文献标识码：A
文章编号：1009-606X(2018)02-0280-08
NumericalSimulationofRadiationHeatTransferinSiCCrystalGrowthFurnace
Chengmin CHEN',Min XU',LiqiuWANGI.3
Chunzhen YANG-2,Guangxia LIU",
[1. Energy Research Institute of Qilu University of Technology (Shandong Academy of Science), Jinan, Shandong 250014, China;
2. Shandong Shenhua Shanda Energy & Environment Co., Ltd., Jinan, Shandong 250014, China; 3. Department of Mechanical Engineering. The University of Hong Kong, Hong Kong 999077, China]
Abstract: Three dimensional numerical simulation platform for SiC crystal growth furnace was established based on C programing language, where physical model of the furnace was built based on cylindrical coordinate, governing equations for electromagnetic and temperature fields were discretized by finite volume method, and radiation characteristic was studied with the help of S2S (Surface to Surface) radiation model. The least distance method was developed, which was used to check whether radiation surfaces were visible with each other or not efficiently. And then the radiation heat transfer in SiC growth chamber and temperature field of SiC growth furmace were studied quantificationally when the current intensity is 1250 A and the current frequency is 16 kHz. The effects of coil structures on crystal temperature field and its gradient distributions were studied by standard deviation method. The results showed eeeeeee saseeeeee
cross-section reduced the poor homogeneity of temperature gradient, which made the crystal to generate large thermal stress. Key words: SiC crystal; temperature field; three dimensional numerical simulation; finite volume method
前言
碳化硅晶体具有高热导率、高漂移速度和高击穿电压等优良性能，适合制备耐高温、高频、高压大功率电子器件，具有重要的军事和民用价值！物理气相传输法(PhysicVaporTransport，PVT)是工业生长SiC晶体的
主要方法，炉内SiC粉料在高温下受热升华，气相组分运动至温度较低的SiC籽晶表面后缓慢生长.生长炉采用射频(RadioFrequency，RF)加热方式在2000~3200K 温度下运行。为提高晶体生长速度，炉内工作压力约为 1~10kPa.密闭的高温低压环境限制了用实验手段精确测量生长炉温度，目前只能采用非接触方式对炉内单点
收稿日期：20170814，修回日期：2017-0928
基金项目：山东省自主创新及成果转化专项基金资助项目(编号：2014ZZCX04215)：山东省科学院青年博士基金资助项目(编号：2014QN016，
2016QN005，2013QN016)：山东省科学院先导科技专项
作者篇介：杨春报(1984-)，男，山东省济南市人，博士，助理研究员，工程热物理专业，E-mail:ychzh1984@163.com；刘光霞，通讯联系人，E-mail:
xiazi_52@163.com
0
Yang C Z, Liu G X, Chen C M, et al. Numerical Simulation of Radiation Heat Transfer in SiC Crystal Growth Furmace (in Chinese) 0
万方数据