第22卷第12期 2014年12月
文章编号
1004-924X(2014)123153-07
光学精密工程
Optics and Precision Engineering
Vol.22No.12
Dec. 2014
像增强型图像传感器在总剂量辐照下的光响应度
闫劲云“，江洁，张广军
（北京航空航天大学仪器科学与光电工程学院精密光机电一体化技术教育部重点实验室，北京100191）摘要：采用"Co-射线对像增强型图像传感器进行了总剂量辐照实验，以便评估该器件在空间总剂量辐照下的微光探测性能。当总剂量达到预定剂量点时，采用离线测试的方法定量测试了器件的光响应度变化情况。实验结果表明，随着辐照总剂量的增加，器件的光响应度迅速下降；当总剂量达60krad(Si)时，相对光响应度降低至辐照前的6%。根据像增强型图像传感器的构成，分析了光响应度下降的原固，并推导了光响应度随辐照剂量变化的经验公式。实验显示，提高像增强型图像传感器的增益电压可补偿光响应度的衰减，总剂量达25krad(Si)时，增益提高0.23V其光响应度即可恢复至未接受辐照前的100%，并保持良好的微光探测能力。研究表明，像增强型图像传感器可承受25krad(Si)的总剂量辐射。
关键词：像增强型图像传感器；五补金属氧化物半导体(CMOS)；总剂量幅射效应；光响应度；增益补偿
中图分类号：TN386.5;TN144
文献标识码：A
doi;10.3788/OPE.20142212.3153
PhotoelectricresponseofICMOSontotaldoseirradiation
YANJin-yun',JIANGJie,ZHANGGuang-jun
(KeyLaboratory of PrecisionOpto-mechatronicsTechnologyof the Ministryof Education,School of InstrumentalScience and Opto-electronics Engineering,BeihangUniversity,Beijinglool9l,China)
*Correspondingauthor，E-mail2032606163.com
Abstract: An irradiation experiment for an image-intensified sensor (Intensified Complemetary Metal oxide Semiconductor,ICMOS ) was performed with a °Co-y ray source to evaluate its weak-light-de tecting ability under the total dose irradiation. When the total dose of irradiation reached the predeter-mined point, the change of photoelectric response capability of the sensor was measured quantitatively by an off line method. The experiment results show that as the total dose of irradiation increases, the photoelectric response capability decreases rapidly. When the total dose of irradiation reaches 6o krad(Si), the photoelectric response capability is reduced to 6 %. The causes of decline of the photoelectric response capability were analyzed according to the components of the image-intensified sensor and em-pirical equations of the decline of the photoelectric response capability were also derived. The experi-ments demonstrate that the decline of the photoelectric response capability is compensated by impro ving the voltage gain of the image-intensified sensor. When the total dose of irradiation reaches 25 krad(Si), the photoelectric response capability still maintains 1oo % by improving the voltage gain of the image-in tensified sensor of 0, 23 V meanwhile maintaining a good weak-light-detecting ability. These findings show
收稿日期：2014-01-24；修订日期：2014-03-20
基金项目：国家自然科学基金资助项目（No.61222304)；高等学校博士学科点专项科研基金资助项目（No.
20121102110032)